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Infrared Light Emitting Diodes
LN189L
GaAlAs Infrared Light Emitting Diode
Unit : mm
Light source for distance measuring systems Features
High-power output, high-efficiency : PO = 5.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 20 ns (typ.) Infrared light emission close to monochromatic light : P = 880 nm(typ.) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems
0.75 0.35 5.00.3 6.00.3 3.40.2 3.00.2 4.00.15 1.0 0.6
1 0.40.1
3.00.15
,, ,
2 3.20.15 0.1 max. 1.0
Mark (Red) 0.38
0.60.1
0.2
Spherical lens o0.550.05 0.60.1 0.50.1 1.50.2
,, ,,,
0.15
Mini hollow mold resin package
Absolute Maximum Ratings (Ta = 25C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 190 100 0.2 3 -25 to +85 - 40 to +100
Unit mW mA A V C C
2.00.2 1.5
2.20.15 1: Anode 2: Cathode
f = 10 kHz, Duty cycle = 25 %
Electro-Optical Characteristics (Ta = 25C)
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Rise time Fall time Half-power angle Precautions for Use
[Airtightness] This product is not structured to provide a complete air seal. Therefore it cannot be immersed in solutions for purposes such as boiling tests or ultrasonic cleaning. [Ability to withstand soldering heat] The package of this product contains thermoplastic resin which has a limited ability to withstand heat. Therefore this product cannot be put through automated soldering operations in which the ambient temperature exceeds the specified temperature. The recommended soldering conditions are as follows. * Temperature of soldering iron tip : 260C or less : 300C or less or * Soldering time : 5 seconds or less : 1 second or less * Soldering position : At least 2 mm away from lead base
Symbol PO P VF IR tr tf
Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V IFP = 100mA IFP = 100mA
The angle in which radiant intencity is 50%
min 3
typ 5.5 880 50 1.55 20 20 20
max
Unit mW nm nm
1.9 10
V A ns ns deg.
]
[Ability to withstand chemicals] If the transparent case requires cleaning, wipe it lightly using ethyl alcohol, methyl alcohol, or isopropyl alcohol. If you plan to use other solvents, carefully check to make sure there are no problems such as a misshapen case or a change in the condition of the case material.
1
LN189L
Infrared Light Emitting Diodes
IF -- Ta
120 160
IF -- VF
1 Ta = 25C 140
IFP -- VF
tw = 10s f = 100Hz Ta = 25C
IF (mA)
IF (mA)
120 100 80 60 40 20
Allowable forward current
80
Pulse forward current
Forward current
IFP (A)
10 -1 10 -2 0
100
60
40
20
0 - 25
0
20
40
60
80
100
0
0
0.5
1.0
1.5
2.0
1
2
3
4
5
Ambient temperature Ta (C )
Forward voltage VF (V)
Forward voltage VF (V)
PO -- IF
10 3 (1) tw = 10s Duty = 0.1% (2) tw = 50s Duty = 50% (3) DC Ta = 25C (1) 10 (2) (3) 1.8
VF -- Ta
10
PO -- Ta
IF = 100mA
Relative radiant power PO
VF (V)
10 2
IF = 100mA
1.4
Relative radiant power PO
1.6
Forward voltage
1
1
1.2
10mA
10 -1
1.0
1mA
10 -2 10 -3
10 -2
10 -1
1
10
0.8 - 40
0
40
80
120
10 -1 - 40
0
40
80
Forward current IF (A)
Ambient temperature Ta (C )
Ambient temperature Ta (C )
P -- Ta
1000 IF = 100mA 100
Spectral characteristics
IF = 100mA 80
Directivity characteristics
0 100 90 80 10 20
Peak emission wavelength P (nm)
900
Relative radiant intensity (%)
Relative radiant intensity (%)
30
60
70 60 50
800
40 50 60 70 80 90
40
40 30
700
20
20
600 - 40
0
40
80
120
0 780
820
860
900
940
980
1020
Ambient temperature Ta (C )
Wavelength (nm)
2

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